Focused Ion Beam (FIB) Micromachining & Sample Preparation

Parameter Specification
Technique Focused Ion Beam (FIB)
Ion Source Gallium (Ga⁺) ion beam
Milling Resolution Nanometer-scale precision
Operating Modes Milling, polishing, deposition
Imaging Support SEM-assisted navigation
Deposition Protective layers (Pt / C)
Sample Geometry Bulk, thin films, devices
Site Specificity Yes (ROI-targeted)
Sample Preparation TEM lamella, APT needle, cross-section
Information Enabled Access to buried interfaces and defects
Typical Use Cases Semiconductor devices, multilayers, interfaces
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Description

Advanced Focused Ion Beam service for site-specific micromachining, cross-sectioning, and high-precision sample preparation. FIB enables controlled material removal at nanometer scale, making it indispensable for correlative microscopy, interface analysis, and advanced characterization workflows.

Key Applications

  • Site-specific TEM lamella preparation

  • APT needle preparation

  • Cross-sectioning of thin films and devices

  • Failure analysis and defect isolation

  • Interface and multilayer exposure

Specifications

Parameter Specification
Technique Focused Ion Beam (FIB)
Ion Source Gallium (Ga⁺) ion beam
Milling Resolution Nanometer-scale precision
Operating Modes Milling, polishing, deposition
Imaging Support SEM-assisted navigation
Deposition Protective layers (Pt / C)
Sample Geometry Bulk, thin films, devices
Site Specificity Yes (ROI-targeted)
Sample Preparation TEM lamella, APT needle, cross-section
Information Enabled Access to buried interfaces and defects
Typical Use Cases Semiconductor devices, multilayers, interfaces

Sample Preparation Capabilities

  • TEM lamella preparation (plan-view & cross-sectional)

  • APT needle fabrication with site-specific targeting

  • Cross-sectioning of devices, coatings, and stacks

  • Low-damage polishing for high-quality downstream analysis

  • (FIB preparation quality directly determines TEM, APT, and EBSD data reliability.)

Deliverables

  • Prepared TEM lamella or APT needle specimens

  • High-precision cross-section images

  • Site-specific documentation and imaging

  • Preparation notes aligned with downstream analysis requirements

Who Should Use This Service

  • Semiconductor device and process engineers

  • Advanced materials and interface researchers

  • Failure analysis and reliability teams

  • Organizations requiring correlative TEM / APT / EBSD analysis

Important Note

FIB is a destructive, ion-based technique.
Careful parameter selection and preparation strategy are essential to minimize damage and artefacts. Our team evaluates each sample and defines the optimal preparation route prior to execution.

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