Focused Ion Beam (FIB) Micromachining & Sample Preparation
| Parameter | Specification |
|---|---|
| Technique | Focused Ion Beam (FIB) |
| Ion Source | Gallium (Ga⁺) ion beam |
| Milling Resolution | Nanometer-scale precision |
| Operating Modes | Milling, polishing, deposition |
| Imaging Support | SEM-assisted navigation |
| Deposition | Protective layers (Pt / C) |
| Sample Geometry | Bulk, thin films, devices |
| Site Specificity | Yes (ROI-targeted) |
| Sample Preparation | TEM lamella, APT needle, cross-section |
| Information Enabled | Access to buried interfaces and defects |
| Typical Use Cases | Semiconductor devices, multilayers, interfaces |
Payment. Payment upon receipt of goods, Payment by card in the department, Google Pay, Online card, -5% discount in case of payment
Warranty. The Consumer Protection Act does not provide for the return of this product of proper quality.
Description
Advanced Focused Ion Beam service for site-specific micromachining, cross-sectioning, and high-precision sample preparation. FIB enables controlled material removal at nanometer scale, making it indispensable for correlative microscopy, interface analysis, and advanced characterization workflows.
Key Applications
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Site-specific TEM lamella preparation
-
APT needle preparation
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Cross-sectioning of thin films and devices
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Failure analysis and defect isolation
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Interface and multilayer exposure
Specifications
Sample Preparation Capabilities
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TEM lamella preparation (plan-view & cross-sectional)
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APT needle fabrication with site-specific targeting
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Cross-sectioning of devices, coatings, and stacks
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Low-damage polishing for high-quality downstream analysis
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(FIB preparation quality directly determines TEM, APT, and EBSD data reliability.)
Deliverables
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Prepared TEM lamella or APT needle specimens
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High-precision cross-section images
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Site-specific documentation and imaging
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Preparation notes aligned with downstream analysis requirements
Who Should Use This Service
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Semiconductor device and process engineers
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Advanced materials and interface researchers
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Failure analysis and reliability teams
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Organizations requiring correlative TEM / APT / EBSD analysis
Important Note
FIB is a destructive, ion-based technique.
Careful parameter selection and preparation strategy are essential to minimize damage and artefacts. Our team evaluates each sample and defines the optimal preparation route prior to execution.













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